US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Method of forming a bonded semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,660, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming a bonded semiconductor structure" was invented by Jen-Yuan Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a bonded structure includes providing a first semiconductor structure including a first die, a first dielectric layer and a first conductive pad electrically connected to the first die and surrounded by the first dielectric layer; providing a second semiconductor structure including a second die, a second dielectric layer and a second conductive pad electrically connected to...