US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Method for writing to magnetic random access memory" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,293, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for writing to magnetic random access memory" was invented by Ji-Feng Ying (Hsinchu, Taiwan), Jhong-Sheng Wang (Taichung, Taiwan) and Baohua Niu (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an array of magnetic random access memory cells includes writing to a magnetic random access memory cell. The writing to a memory cell includes determining an optimum write current for the array of memory cells, and applying the optimum write current to a first memory cell in the array. A first read current ...