US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Method for manufacturing a semiconductor device having a dummy section" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,543, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for manufacturing a semiconductor device having a dummy section" was invented by Osamu Koike (Yokohama, Japan) and Yutaka Kadogawa (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, active elements, first insulating film, an electrode pad, and a Through Silicon VIA electrode. The semiconductor substrate has an obverse surface and a reverse surface. The active elements define an element-absence area free of any of the active elements. The element-absence area includes a s...