US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Method for forming semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,599, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor structure" was invented by Meng-Pei Lu (Hsinchu, Taiwan), Shin-Yi Yang (New Taipei, Taiwan), Shu-Wei Li (Hsinchu, Taiwan), Chin-Lung Chung (Hsinchu, Taiwan) and Ming-Han Lee (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes following operations. A hybrid layered structure is formed. The hybrid layered structure includes at least a 2D material layer and a first 3D material layer. Portions of the hybrid layered structure are removed to form a plu...