US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Method for forming semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,551, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming semiconductor structure" was invented by Chih-Hsin Yang (Zhubei, Taiwan), Dian-Hau Chen (Hsinchu, Taiwan) and Yen-Ming Chen (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming an interconnect structure, and forming a conductive feature electrically connected to the interconnect structure. The method also includes forming a first passivation layer over the interconnect structure and the conductive feature, and etching the first pass...