US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Metal oxide interlayer structure for NFET and PFET" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,739, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Metal oxide interlayer structure for NFET and PFET" was invented by Min Cao (Hsinchu, Taiwan), Pei-Yu Wang (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method ...