ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,740, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Metal layer protection during wet etching" was invented by Kuo-Ju Chen (Taichung, Taiwan), Su-Hao Liu (Chiayi, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of fabricating a contact in a semiconductor device. The method includes: receiving a semiconductor structure having an opening into which the contact is to be formed; forming a metal layer in the opening; forming a bottom anti-reflective coating (BARC) layer in the opening; performing implantin...