US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Metal insulator metal (MIM) structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,592, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal insulator metal (MIM) structure and manufacturing method thereof" was invented by Sai-Hooi Yeong (Hsinchu County, Taiwan), Chih-Yu Chang (New Taipei, Taiwan), Chun-Yen Peng (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a MIM structure, a first contact and a second contact. The MIM s...