US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Memory device comprising second memory cell having first terminal coupled to first signal line through first memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,564, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device comprising second memory cell having first terminal coupled to first signal line through first memory cell" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Hsinchu County, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first signal line, a second signal line, a first memory cell and a plurality of second memory ce...