US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Memory device and semiconductor die, and method of fabricating memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,587, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and semiconductor die, and method of fabricating memory device" was invented by Ji-Feng Ying (Hsinchu, Taiwan), Jhong-Sheng Wang (Taichung, Taiwan) and Tsann Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells...