ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,588, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory device" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes two word-line electrodes, two source-line electrodes, and two data storage features for use by four memory cells, which are referred to as first, second, third and fourth memory cells. One word-line electrode is common to the first and second memory cells, and the other word-line electrode is common to the third and fourth memory cells. One source-line electrode is common to the...