US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Mask for EUV lithography and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,662, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Mask for EUV lithography and method of manufacturing the same" was invented by Yun-Yue Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed ove...