ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,362, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Magnetic tunnel junction devices" was invented by Jui-Fen Chien (Taichung, Taiwan), Wei-Gang Chiu (Hsinchu, Taiwan) and Tsann Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesse...