US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Magnetic tunnel junction devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,761, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Magnetic tunnel junction devices" was invented by Hsi-Wen Tien (Hsinchu County, Taiwan), Wei-Hao Liao (Taichung, Taiwan), Pin-Ren Dai (Hsinchu County, Taiwan), Chih-Wei Lu (Hsinchu, Taiwan) and Chung-Ju Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first dielectric layer, a magnetic tunnel junction (MTJ), an oxide layer, a cap layer, and a second dielectric layer. The MTJ is over the first dielectric layer. The oxide layer is over the first dielectric layer. The cap layer is over the first dielectric layer....