US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Low resistant contact method and structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,729, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Low resistant contact method and structure" was invented by Yu-Sheng Wang (Tainan, Taiwan) and Yu-Ting Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a metal-silicide region formed in a semiconductor material in a contact opening. A concentration of a material, including chlorine, fluorine, or a combination thereof is in the metal-silicide region near an uppermost surface of the metal-silicide region. The presence of chlorine or fluorine results from a physical bombarding of the chlorine or fluorine in the con...