US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Isolation structure for preventing unintentional merging of epitaxially grown source/drain" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,698, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Isolation structure for preventing unintentional merging of epitaxially grown source/drain" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Kuan-Lin Yeh (Hsinchu, Taiwan), Chun-Jun Lin (Hsinchu, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Mu-Chi Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active r...