US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Interconnect conductive structure comprising two conductive materials" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,611, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect conductive structure comprising two conductive materials" was invented by Yu-Teng Dai (New Taipei, Taiwan), Hsi-Wen Tien (Xinfeng Township, Taiwan), Wei-Hao Liao (Taichung, Taiwan), Hsin-Chieh Yao (Hsinchu, Taiwan), Chih Wei Lu (Hsinchu, Taiwan) and Chung-Ju Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate, a second interconnect dielectric layer arranged over the firs...