US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Integrated circuit with backside trench for metal gate definition" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,630, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit with backside trench for metal gate definition" was invented by Kuo-Cheng Chiang (Hsinchu, Taiwan), Jung-Chien Cheng (Hsinchu, Taiwan), Shi-Ning Ju (Hsinchu, Taiwan), Guan-Lin Chen (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first nanosheet transistor and a second nanosheet transistor on a substrate. The first and second nanosheet each include gate electrodes. A gate isolation structure extends from a backside of the substrate between the gat...