ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,543, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Integrated circuit device with reduced via resistance" was invented by Jui-Lin Chen (Taipei, Taiwan), Yu-Kuan Lin (Taipei, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, a contact, a first gate, a second gate, a dielectric feature between the gates, a via, and a conductive line. The gates are each adjacent the contact and aligned lengthwise with each other along a first direction. A first sidewall of the dielectric feature defines an end-wall of the first gate. A second ...