US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,764, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same" was invented by Tsung-Hsueh Yang (Taichung, Taiwan), Chang-Chih Huang (Hsinchu, Taiwan) and Fu-Ting Sung (Yangmei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment phase-change memory device includes a first electrode formed over an interconnect layer, a phase-change memory element formed over the first electrode, a second electrode formed over the phase-change memory element, and an oxygen-free spacer l...