ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,536, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Glue layer etching for improving device performance and providing contact isolation" was invented by Chia-Hao Chang (Hsinchu, Taiwan), Jia-Chuan You (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan) and Lin-Yu Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with reduced contact resistance is provided. The semiconductor device includes a substrate having a channel region and a source/drain region, a source/drain contact structure over the source/drain region, a conductive structure over the source/drain con...