US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Gate all around transistor with dual inner spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,732, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate all around transistor with dual inner spacers" was invented by Zhi-Chang Lin (Hsinchu, Taiwan), Kuan-Ting Pan (Hsinchu, Taiwan), Shih-Cheng Chen (Hsinchu, Taiwan), Jung-Hung Chang (Hsinchu, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Chien-Ning Yao (Hsinchu, Taiwan) and Kuo-Cheng Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transist...