US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Fin field-effect transistor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,742, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor device and method of forming the same" was invented by Shih-Yao Lin (New Taipei, Taiwan), Kuei-Yu Kao (Hsinchu, Taiwan), Chih-Han Lin (Hsinchu, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate electrode over the fin; removing lower portions of the dummy gate electrode prox...