US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Fin field-effect transistor and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,596, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor and method of forming the same" was invented by Chao-Hsuan Chen (Hsinchu, Taiwan), Ming-Chia Tai (Zhubei, Taiwan), Yu-Hsien Lin (Kaohsiung, Taiwan), Shun-Hui Yang (Jungli, Taiwan) and Ryan Chia-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height o...