US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,538, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same" was invented by Chien-Yuan Chen (Taichung, Taiwan), Chen-Ming Lee (Taoyuan, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A FinFET device structure is provided. The FinFET device structure includes a gate structure formed over a fin structure, and an S/D contact structure formed adjacent to the gate structure. The FinFET device structure includes a protection layer...