US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Epitaxial structures exposed in airgaps for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,615, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial structures exposed in airgaps for semiconductor devices" was invented by Po-Yu Lin (New Taipei, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chia-Pin Lin (Hsinchu County, Taiwan), Tzu-Hua Chiu (Hsinchu, Taiwan), Kuan-Hao Cheng (Hsinchu, Taiwan), Wei-Han Fan (Hsin-Chu, Taiwan), Li-Li Su (HsinChu County, Taiwan) and Wei-Min Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to t...