US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Embedded ferroelectric memory in high-k first technology" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,584, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Embedded ferroelectric memory in high-k first technology" was invented by Wei Cheng Wu (Zhubei, Taiwan) and Pai Chi Chou (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first doped region and a second doped region disposed within a substrate. A ferroelectric material is arranged over the substrate and between the first doped region and the second doped region. An isolation structure is arranged within the su...