ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,595, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Dummy hybrid film for self-alignment contact formation" was invented by Bor Chiuan Hsieh (Taoyuan, Taiwan), Tsai-Jung Ho (Xihu Township, Taiwan), Po-Cheng Shih (Hsinchu, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate stack over a semiconductor region, forming gate spacers on opposing sides of the dummy gate stack, forming a source/drain region on a side of the dummy gate stack, forming an inter-layer dielectric over the source/drain region, replacing the dummy gate st...