US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS" (Belgian Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,550, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS" was invented by Mark Van Dal (Linden, Belgium) and Gerben Doornbos (Kessel-Lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin including a bottom portion, a first sacrificial layer disposed over the bottom portion, a first semiconductor layer disposed over the first sacrificial layer, a second sacrificial layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the second sacrificial ...