US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,754, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereof" was invented by Chih-Ching Wang (Kinmen County, Taiwan), Jon-Hsu Ho (New Taipei, Taiwan), Wen-Hsing Hsieh (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Zhiqiang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary device includes a channel layer, a first source/drain feature, a second source/drain feature, and a metal g...