ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,715, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Capacitor structure" was invented by Chang-Yu Huang (Hsinchu County, Taiwan), Yi Hsuan Lin (Taichung, Taiwan) and Chih-Pin Hung (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure is provided. The capacitor structure includes a first electrode and a second electrode. The first electrode includes a first segment and a third segment. The second electrode includes a second segment and a fourth segment, the second segment is interposed between the first segment and the third segment, and the third segment is interp...