US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Buffer layer in memory cell to prevent metal redeposition" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,767, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Buffer layer in memory cell to prevent metal redeposition" was invented by Chung-Chiang Min (Zhubei, Taiwan), Chang-Chih Huang (Taichung, Taiwan), Yuan-Tai Tseng (Zhubei, Taiwan), Kuo-Chyuan Tzeng (Chu-Pei, Taiwan) and Yihuei Zhu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a memory device. The memory device includes a first electrode overlying a substrate. A data storage layer is disposed on the first electrode. A second electrode overlies the data storage layer. A buffer layer is disposed between the...