ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,607, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Backside gate contact" was invented by Huan-Chieh Su (Changua County, Taiwan), Chun-Yuan Chen (HsinChu, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Li-Zhen Yu (New Taipei, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first...