ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,626, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Asymmetric source/drain epitaxy" was invented by Yu-Lien Huang (Jhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a plurality of fins on a substrate and a dummy gate structure over the fins. A spacer layer is formed over the dummy gate structure and the fins. The spacer layer is recessed to form asymmetrically recessed spacers along sidewalls of each of the fins, thereby exposing a portion of each of the fins. A source/drain epitaxy is grown on the exposed portions of the plurality of fins, a first source/drain...