US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Air gap in inner spacers and methods of fabricating the same in field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,735, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Air gap in inner spacers and methods of fabricating the same in field-effect transistors" was invented by Chien Ning Yao (Hsinchu, Taiwan), Bo-Feng Young (Taipei, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Sai-Hooi Yeong (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate stack having a top portion disposed over the stack of semiconductor layers and a bottom portion interleaved wit...