ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,583, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"3D ferroelectric memory" was invented by Sheng-Chih Lai (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a metal-ferroelectric-insulator-semiconductor (MFIS) memory device, as well as a method for forming the MFIS memory device. According to some embodiments of the MFIS memory device, a lower source/drain region and an upper source/drain region are vertically stacked. A semiconductor channel overlies the lower source/drain regi...