US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Transistor gates and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,925, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Transistor gates and method of forming" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. A portion of the gate electrode between the first nanostru...