US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "SRAM cell word line structure with reduced RC effects" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,412, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"SRAM cell word line structure with reduced RC effects" was invented by Hidehiro Fujiwara (Hsinchu, Taiwan), Wei-Min Chan (New Taipei, Taiwan), Chih-Yu Lin (Taichung, Taiwan), Yen-Huei Chen (Hsinchu County, Taiwan) and Hung-Jen Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes first and second gate electrodes, a word line and a first metal island. The first gate electrode corresponds to transistors of a memory cell. The second gate electrode is separated from the first gate electrode and corresponds to the trans...