US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Source/drain feature for multigate device performance and method of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,912, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Source/drain feature for multigate device performance and method of fabricating thereof" was invented by Chih-Chuan Yang (Hsinchu, Taiwan), Wen-Chun Keng (Hsinchu County, Taiwan), Chong-De Lien (Hsinchu, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Hsin-Wen Su (Hsinchu, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices having improved source/drain features and methods for fabricating such are disclosed herein. An exemplary device includes a semiconductor layer stack disposed over a mes...