US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Sidewall protection for PCRAM device" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,526, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Sidewall protection for PCRAM device" was invented by Yu-Chao Lin (Hsinchu, Taiwan), Yuan-Tien Tu (Chiayi County, Taiwan), Shao-Ming Yu (Hsinchu County, Taiwan) and Tung-Ying Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase change random access memory (PCRAM) device includes a memory cell overlying an inter-metal dielectric (IMD) layer, a protection coating, and a first sidewall spacer. The memory cell includes a bottom electrode, a top electrode and a phase change element between the top electrode and the bottom electro...