US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Semiconductor structure havbing an enhanced E-fuse and a method making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,816, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Semiconductor structure havbing an enhanced E-fuse and a method making the same" was invented by An-Jiao Fu (Hsinchu, Taiwan), Po-Hsiang Huang (Taipei, Taiwan), Derek Hsu (Hsinchu, Taiwan), Hsiu-Wen Hsueh (Taichung, Taiwan) and Meng-Sheng Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a ...