US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Semiconductor device with fin end spacer dummy gate and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,930, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with fin end spacer dummy gate and method of manufacturing the same" was invented by Kai-Tai Chang (Kaohsiung, Taiwan), Tung-Ying Lee (Hsinchu, Taiwan), Wei-Sheng Yun (Taipei, Taiwan), Tzu-Chung Wang (Hsinchu, Taiwan), Chia-Cheng Ho (Hsinchu, Taiwan), Ming-Shiang Lin (Hsinchu, Taiwan) and Tzu-Chiang Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first fin and a second fin in a first direction and aligned in the first direction over a substrate, an isolation insulating...