US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Semiconductor device with dielectric liners on gate refill metal" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,918, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with dielectric liners on gate refill metal" was invented by Yuan-Hsiang Wu (Changhua County, Taiwan), Jia-Chuan You (Taoyuan, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a gate structure, first and second gate spacers, source/drain regions, a refill metal structure, and a first dielectric liner. The gate structure is on a substrate. The first and second gate spacers are on opp...