US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Multilayer capacitor electrode" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,909, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multilayer capacitor electrode" was invented by Hsiang-Ku Shen (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a contact feature in a first dielectric layer, a first passivation layer over the contact feature, a bottom conductor plate layer disposed over the first passivation layer and including a first plurality of sublayers, a second dielectric layer over the bottom conductor p...