US Patent Issued to Taiwan Semiconductor Manufacturing on March 4 for "Method, device, and circuit for high-speed memories" (Canadian Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,602, issued on March 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method, device, and circuit for high-speed memories" was invented by Jaspal Singh Shah (Ottawa) and Atul Katoch (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a plurality of memory cells arranged in an array, an input/output (I/O) interface connected to the plurality of memory cells to output data signal from each memory cell, and a control circuit. In some embodiments, the control circuit includes a first clock gene...