US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 4 for "Merged bit lines for high density memory array" (California Inventor)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,599, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Merged bit lines for high density memory array" was invented by Perng-Fei Yuh (Walnut Creek, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some aspects of the present disclosure, a memory array includes: a plurality of memory cells; and a plurality of logic gates, each of the plurality of logic gates having a first input, a second input, and an output gating a corresponding one of the plurality of memory cells, wherein the first input of each of the plurality of logic gates of a first subset is coupled to a first bit select line." ...