ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,589, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method for operating the same" was invented by Pei-Chun Liao (Hsinchu County, Taiwan), Yu-Kai Chang (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan), Yih Wang (Hsinchu, Taiwan) and Chieh Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided, including a memory array, a driver circuit, and recover circuit. The memory array includes multiple memory cells. Each memory cell is coupled to a control line, a data line, and a source line and, during a normal op...