ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,619, issued on March 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory array structure" was invented by Hung-Li Chiang (Taipei, Taiwan), Jer-Fu Wang (Taipei, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Meng-Fan Chang (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some aspects of the present disclosure, a memory array structure is disclosed. In some embodiments, the memory array structure includes a word array. In some embodiments, the word array stores an N-bit word. In some embodiments, the word array includes a plurality of first memory structures and a plurality of second memory ...