US Patent Issued to Taiwan Semiconductor Manufacturing on March 4 for "Grid structure to reduce domain size in ferroelectric memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,435, issued on March 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Grid structure to reduce domain size in ferroelectric memory device" was invented by Han-Jong Chia (Hsinchu, Taiwan) and Sai-Hooi Yeong (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a first dielectric layer over a substrate. A first conductive structure overlies the first dielectric layer. A data storage structure is disposed between the first dielectric layer and the first conductive structure. The data storage structure comprises a da...