US Patent Issued to Taiwan Semiconductor Manufacturing on March 4 for "FinFET device having a gate with a tapering bottom portion and a gate fill material with a widening bottom portion" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,748, issued on March 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FinFET device having a gate with a tapering bottom portion and a gate fill material with a widening bottom portion" was invented by Shih-Yao Lin (New Taipei, Taiwan), Kuei-Yu Kao (Hsinchu, Taiwan), Chih-Han Lin (Hsinchu, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate over the fin; reducing a thick...